Characteristics, Current Status and Development Trend of Silicon Carbide MOS

Characteristics of silicon carbide materials

Compared with silicon-based semiconductor materials, the third-generation semiconductor materials represented by SiC have the characteristics of high breakdown electric field, high saturation electron drift speed, high thermal conductivity, etc., and are suitable for making high-temperature, high-frequency, radiation-resistant and high-power devices. Based on the excellent characteristics of SiC materials, compared with silicon-based MOSFETs/IGBTs, SiC MOSFETs of the same specification have certain advantages in terms of loss, volume and other indicators.

Where silicon carbide needs to break through

Although the application prospects of SiC products in the field of new energy vehicles are widely optimistic in the industry, the biggest bottleneck at present is mainly the low cost performance of SiC MOSFET products. In terms of price, due to the low production efficiency of SiC substrates, the cost is much higher than that of silicon wafers, coupled with the low yield of post-epitaxy, chip manufacturing and device packaging, resulting in high prices of SiC devices.

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In terms of product performance, the gate interface regulation technology of high-quality and low-interface state in the SiC MOSFET manufacturing process needs to be strengthened, and the batch manufacturing technology and yield need to be further improved. At the same time, the actual implementation time of SiC MOSFETs is short, and indicators such as stability and life in the automotive field still need time and practical verification.

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The development trend of silicon carbide

Mid-to-high-end models with long cruising range will be introduced first. At present, new energy vehicle companies generally rely on increasing battery capacity to increase cruising range. SiC MOSFETs have lower losses and higher power conversion efficiency than silicon-based IGBTs, which can increase the range of vehicles without changing the battery capacity. Therefore, considering technical and cost factors, SiC MOSFETs will be the first to be introduced in mid-to-high-end new energy models with long cruising range.