Summary of the Classification of Common Electronic Gases in Semiconductor Manufacturing

In the semiconductor manufacturing process, a wide variety of electronic gases are used in different process links. According to their use, these gases can be roughly divided into the following categories:

Mixing Gas

Doped gases are mainly used in ion implantation or diffusion processes to incorporate specific impurities (such as P, B, AS, etc.) into the semiconductor matrix to regulate their electrical properties. Common doped gases include:

AsH₃,PH₃,GeH₄,B₂H₆,AsCl₃,AsF₃,H₂S,BF₃,BCl₃,SeH₂,SbH₃,(CH₃)₂Te,(CH₃)₂Cd,(C₂H₅)₂Cd,PCl₃,(C₂H₅)₂Te

Crystals grow gas

Crystal growth gases are used for the growth reaction of epitaxial layers or ALDs. Common gases are:

SiH₄,SiH, Cl, SiHCl₃, SiCl₄, BH₆, BBr₃BCl₃, AsH₃, PH₃, GeH₄,TeH₂, (CH₃)₃Al, (C₂H₅)₃Al, (CH₃)₃As, (C₂H₅)₃As, (CH₃)₂Hg, (CH₃)P, (C₂H₅)₃P, SnCl₄, GeCl₄, SbCl₅, Si₂H₆, HCl.

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Etching gas

By generating reactive intermediates (e.g., F radicals, Cl radicals, etc.) under plasma excitation, they are used to etch different thin film materials. Common gases are:

SiF₄, CF₄, C₃F₈, CHF₃, C₂F₆, CClF₃, O₂, C₂ClF₅, NF₃, SF₆, BCl₃, HFCl₂, N₂, He, Ar, Cl₂, HCl, HF, HBr

Ion Injection Gas

Ion source materials used in ion implantation processes:

AsF₃, PF₃, PH₃, BF₃, BCl₃, SiF₄, SF₆, H₂, N₂.

V.Chemical Vapor Deposition Gas

For the growth of thin films in CVD processes:

SiHCl₂, SiCl₄, NH₃, NO, O₂, NO2

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VI.Dilute Gas

Commonly used in doping, CVD, or etching to regulate reactive gas concentrations or heat transfer:

N₂, Ar, He, H₂, CO₂, N₂O, O₂