RF System of Etch Equipment

0010-37264 Cooldown Chamber Multi Slot Ass'y

0040-09963 PEDESTAL,150MM FLAT,IS,NI LIFT2,HVCEN

RF system is usually composed of RF generator and RF match, is one of the core systems of etching equipment, the current market in this field is mainly occupied by United States Youyi Semiconductor (AE), Wanji Instrument (MKS), and Comed Ed. RF power supply is a power supply that can generate a fixed frequency of sine wave voltage and has a high power. After the etching gas (mainly CF4) is passed into the reaction chamber through the gas system, it is ionized by the high-frequency electric field (usually 13.56MHz) generated by the RF power supply, resulting in a glow discharge, which completes the transition from gas molecules to ions, forms plasma, and improves the gas reactivity. The RF power supply is directly related to the plasma concentration, uniformity and stability in the reaction chamber. In most etching devices, the RF power supply is used in conjunction with the DC power supply to control the density and energy of the ions, respectively. Due to the accelerating effect of the electric field, ions typically etch wafers in both physical and chemical forms. In addition, RF systems are an important part of thin film deposition equipment, degumming machines, ion implanters and cleaning equipment.

A common combination of RF system configurations for etching equipment is a fixed-frequency RF power supply and an adjustable matcher. During the etching process, the matcher will autonomously adjust the internal adjustable capacitor to match the output impedance of the power supply itself and the reaction load impedance to achieve the full power output of the RF power supply. In an ideal matching state, all RF signals can be transmitted to the load position and the reflected power of their energy is reduced. When the load impedance and the impedance of the output of the radio power supply are not in a matching state, a small part of the input signal will be reflected back to the RF source at the load end, and the output power of the RF power supply is not fully used, which reduces the efficiency of the etching reaction.