China's Power Semiconductors Have Achieved Remarkable Results!

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On June 2-6, 2024, the 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) was successfully held in Bremen, Germany. As the flagship conference of power semiconductors under IEEE, ISPSD covers the design, process, packaging and application of power semiconductor devices and power integrated circuits, and is the most influential and largest international academic conference in the field of power devices.A total of 331 papers and 7 late news papers were received in this conference. After the selection of the technical committee, a total of 141 papers were accepted (acceptance rate of 42.6%), including 42 oral presentations (acceptance rate of only 12%) and 99 poster papers. The ISPSD conference has always maintained the tradition of a single venue, with no sub-venues.

China has achieved remarkable results

 

 

China is the country with the largest number of papers selected for this conference, with a total of 78 papers (68 from Chinese mainland, 4 from Hong Kong, and 6 from Taiwan). In the academic world, the University of Electronic Science and Technology of China topped the list with 15 papers, Zhejiang University and Southeast University tied for second with 9 papers, and Peking University and the University of Science and Technology of China tied for fourth with 6 papers each. There were 42 oral presentations at the conference, of which 23 were selected by China (20 from Chinese mainland, 1 from Hong Kong, and 2 from Taiwan), and Zhejiang University tied with Toshiba for the first place in the world with 5 papers. Peking University and University of Electronic Science and Technology of China tied for third place in the world with three papers. These achievements demonstrate China's rapid development in the field of power semiconductors. Since ISPSD was held in 1988, a total of 3201 regular papers (including oral presentations and poster papers, excluding Plenary reports) have been accepted, and 463 papers have been selected from China (326 from Chinese mainland, 1 from Macao, 78 from Hong Kong, and 58 from Taiwan), accounting for 14.5% of the total number of selected papers in the world. In particular, in the past 10 years, a total of 374 papers have been selected in China, of which 279 papers have been selected in Chinese mainland. China's rapid development in the field of power semiconductors is inseparable from the efforts of all domestic experts and scholars, such as the team of Professor Zhang Bo of the University of Electronic Science and Technology of China, the team of Professor Sun Weifeng of Southeast University, the team of Professor Chen Jing of the Hong Kong University of Science and Technology, the team of Professor Sheng Sheng of Zhejiang University, as well as Peking University, University of Science and Technology of China, Xidian University, Nanjing University, Institute of Microelectronics of the Chinese Academy of Sciences, Fudan University and other universities and research institutes. The team, experts and scholars have played an important role in gradually improving China's reputation and influence in the field of international power semiconductors.

ISPSD Hall of Fame

In order to recognize researchers who have made outstanding contributions in the field of power semiconductors, the ISPSD conference has established a Hall of Fame since 2018, and only 2~3 inductees are selected every year except for the first Hall of Fame. In this conference, Professor Sheng Shi, Dean of the School of Electrical Engineering of Zhejiang University, was inducted into the ISPSD Hall of Fame for his academic achievements in the direction of silicon carbide power devices and his contributions to the organization of the ISPSD conference, becoming the second Chinese mainland scholar to receive this honor after Academician Chen Xingbi. Chinese scholars inducted into the ISPSD Hall of Fame include: Professor Chen Xingbi of the University of Electronic Science and Technology of China (2018), Professor Tat-Sing Paul Chow of Zhou Dacheng of Rensselaer Polytechnic Institute (2018); Johnny Kin On Sin, Shan Jian'an, Hong Kong University of Science and Technology (2020), Zheng John Shen, Shen Zheng, Illinois Institute of Technology (2023). At the 30th ISPSD Conference in 2018, Academician Chen Xingbi was inducted into the first IEEE ISPSD Hall of Fame for his invention of the disruptive technology of composite buffer pressure structure (now known as super-junction), becoming the first Chinese scientist in China to be inducted into the Hall of Fame. Academician Chen's outstanding achievements in the direction of super junction devices have had an important impact on the progress of power semiconductor technology and industrial development. At the 2024 ISPSD conference, Professor Sheng Shi was selected as a Chinese scientist in Chinese mainland, indicating that the achievements of China's power semiconductor device industry have been recognized by international academic and industrial peers, which is not only an affirmation of the work of experts, scholars and industry in the field of power semiconductors in China, but also inspires the younger generation of researchers in China to continue to move forward in the future and make more and greater contributions to the development of global power semiconductor technology.

China's industry is growing

Of the 463 papers selected in China, only 49 came from the industry (15 from Chinese mainland and 34 from Taiwan), accounting for less than 11%; In Chinese mainland, less than 5% of papers from industry are published. However, in many academic paper cooperation units, we can see the backbone enterprises of Huahong Hongli, China Resources Micro and Nenghua Semiconductor. Moreover, since 2015, 7 companies, including CRRC Zhuzhou, State Grid, Delta, HiSilicon, TSMC, NIO, Chipji Semiconductor, and Silicon Matrix, have been invited to make Plenary reports at ISPSD, which shows that the progress made by China's industry in the field of power semiconductors has been recognized by international peers. The future of China's power semiconductors can be expected!

 

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