Break The Ceiling! A New Breakthrough in The Key Technology Of Trench SiC MOSFET Chips

Break the "Ceiling"! A New Breakthrough in the Key Technology of Trench SiC MOSFET Chips

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After 4 years of independent research and development, the National Third-Generation Semiconductor Technology Innovation Center (Nanjing) has successfully tackled the key technology of trench silicon carbide MOSFET chip manufacturing and broken the "ceiling" of planar silicon carbide MOSFET chip performance.

This is China's first breakthrough in this field

National Third Generation Semiconductor Technology Innovation Center (Nanjing). Source: Jiangning release.

Silicon carbide is a representative material of the third generation of semiconductor materials, which has excellent characteristics such as wide bandgap, high critical breakdown electric field, high electron saturation migration rate and high thermal conductivity

At present, the application in the industry is mainly planar silicon carbide MOSFET chips. The design of the trench gate structure has obvious performance advantages over the planar gate structure, which can achieve lower conduction loss, better switching performance, and higher wafer density, thereby greatly reducing the cost of chip use.

"It's all about the process."

Huang Runhua, technical director of the National Third-Generation Semiconductor Technology Innovation Center (Nanjing), introduced that the hardness of silicon carbide materials is very high, and changing the plane to a trench means that it is necessary to "dig holes" in the material, and it cannot be "dug into potholes".

In the preparation process, the etching accuracy, etching damage and etching surface residues of the etching process have a fatal impact on the development and performance of silicon carbide devices.

On the platform of the National Third-Generation Semiconductor Technology Innovation Center (Nanjing), researchers test products on the production line of third-generation semiconductor-silicon carbide chips. Source: Nanjing Daily/Purple Mountain News reporter Sun Zhongyuan.

In this regard, the National Third-Generation Semiconductor Technology Innovation Center (Nanjing) organized the core R&D team and the whole line to cooperate with the team for 4 years, constantly trying new processes and finally establishing a new process flow, breaking through the difficulties of "digging pits", stability and accuracy, and successfully manufacturing trench silicon carbide MOSFET chips .Compared with the planar type, the conduction performance is improved by about 30%.

 

At present, the center is developing trench silicon carbide MOSFET chip products and launching trench silicon carbide power devices. It is expected to be put into application in the fields of electric drive of new energy vehicles, smart grid, and photovoltaic energy storage within one year. What is the impact on people's lives?

Huang Runhua took new energy vehicles as an example to introduce that silicon carbide power devices themselves have power-saving advantages compared with silicon devices, which can improve the endurance by about 5%; The application of a trench structure enables a design with lower resistance. With the same on-performance indicators, a higher density chip layout can be realized, thereby reducing the cost of chip ownership.

Huang Runhua took new energy vehicles as an example to introduce that silicon carbide power devices themselves have power-saving advantages compared with silicon devices, which can improve the endurance by about 5%; The application of a trench structure enables a design with lower resistance. With the same on-performance indicators, a higher density chip layout can be realized, thereby reducing the cost of chip ownership.

At present, the National Third-Generation Semiconductor Technology Innovation Center (Nanjing) has started the research of silicon carbide super-assembled devices. The performance of this structure is better and stronger than that of the grooved structure, and it is still under development", Huang Runhua revealed

 

 

Content source丨Nanjing Daily/Purple Mountain News reporter Zhang Anqi