0020-34695 Liner, Cathode, Full Flow, Oxide

# 1. 0020-34695

- Applicable equipment: Etching machines (e.g. Centura, DPS) or CVD equipment that may be used, depending on the equipment model.

# 2. Liner

- Purpose: Protects the inner wall of the reaction chamber to prevent the deposition or corrosion of process by-products (e.g., polymers, metal residues) and prolong the life of the equipment.

- Materials: - May be made of high-purity quartz (Quartz), ceramic (Al₂O₃, Y₂O₃) or anodized aluminum, which needs to withstand plasma and high temperatures.

- In the Oxide process, metal contamination needs to be avoided, so the gasket needs to be highly chemically inert.--

# 3. Cathode

- Function: In plasma processes such as etching or deposition, the cathode is used to generate a radio frequency (RF) electric field that excites the gas to form a plasma.

- Key features: - Material: Typically silicon (Si), silicon carbide (SiC) or aluminum (Al), with a special coating (e.g. ceramic) on the surface.

- Cooling design: The cathode needs to have an integrated cooling channel (water-cooled or helium-cooled) to prevent deformation due to high temperatures.

- Matching network: Matches the RF supply impedance to ensure plasma stability.

# 4. Full Flow

- Meaning: May refer to one of two scenarios:

Full Gas Flow: - In an etching or deposition process, the reaction gas is fed into the chamber at maximum flow for rapid cleaning of the chamber or for specific process steps such as high aspect ratio etching.

2. Full Coolant Flow: - The cathode or cavity cooling system is at maximum flow to ensure efficient heat dissipation, especially in high-temperature processes.

# 5. Oxide

- Possible Applications: - Silicon Oxide Etch: e.g. STI (Shallow Trench Isolation), ILD (Interlayer Media) Etching, using fluorine-based gases (CF₄, C₄F₈) or remote plasma.

- Oxide Deposition: Deposition of SiO₂ dielectric layers, such as TEOS CVD or HDP-CVD. - Process Requirements:

- High uniformity, low defects (e.g., micro-bridging, particles), may require Full Flow mode to optimize gas distribution. ---

# Typical application scenarios

1. Etching Equipment(eg. DPSII) - Cathode may cause into etching silicon oxide with excitation plasma; Line may protect the cavity from by-product contamination.

2. CVD Equipment(eg. Centura)：

- When silica is deposited, the plasma is maintained by cathode and particle formation is reduced by liner.

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